1/8 preliminary data june 2003 this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. stGP7NB60F - stgd7nb60f n-channel 7a - 600v - to-220 / dpak powermesh? igbt n high input impedance n low on-voltage drop (v cesat ) n off losses include tail current n low gate charge n high current capability n high frequency operation n add suffix t4 for ordering in tape & reel (dpak) description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has de- signed an advanced family of igbts, the power- mesh? igbts, with outstanding perfomances. the suffix "f" identifies a family optimized to achieve very low switching switching times for fre- quency applications (<40khz) applications n motor controls n smps and pfc and both hard switch and resonant topologies absolute maximum ratings ( ) pulse width limited by safe operating area type v ces v ce(sat) (max) @25c i c @100c stGP7NB60F stgd7nb60f 600 v 600 v < 2.4 v < 2.4 v 7a 7a symbol parameter value unit to-220 dpak v ces collector-emitter voltage (v gs =0) 600 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c =25c 14 a i c collector current (continuous) at t c =100c 7a i cm ( ) collector current (pulsed) 56 a p tot total dissipation at t c = 25c 80 70 w derating factor 0.64 0.56 w/c t stg storage temperature C 55 to 150 c t j max. operating junction temperature 150 c to-220 1 2 3 1 3 dpak internal schematic diagram
stGP7NB60F - stgd7nb60f 2/8 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic switching on to-220 dpak rthj-case thermal resistance junction-case max 1.56 1.78 c/w rthj-amb thermal resistance junction-ambient max 62.5 100 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collectro-emitter breakdown voltage i c = 250 a, v ge = 0 600 v i ces collector cut-off (v ge =0) v ce = max rating, t c =25c 10 a v ce = max rating, t c = 125 c 100 a i ges gate-emitter leakage current (v ce =0) v ge =20v,v ce = 0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge ,i c = 250a 35v v ce(sat) collector-emitter saturation voltage v ge =15v,i c =7a 2 2.4 v v ge =15v,i c = 7 a, tj =125c 1.5 v symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce =25v,f=1mhz,v ge =0 540 pf c oes output capacitance 80 pf c res reverse transfer capacitance 13 pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480v, i c =7a, v ge =15v 37 4 18 50 nc nc nc i cl latching current v clamp = 480 v tj = 125c , r g =10 w 28 a symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v cc =480v,i c =7a r g =10 w ,v ge =15v 17 6 ns ns (di/dt) on eon turn-on current slope turn-on switching losses v cc = 480 v, i c =7ar g =10 w v ge = 15 v,tj =125c 900 60 a/s j
3/8 stGP7NB60F - stgd7nb60f electrical characteristics (continued) switching off note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 480 v, i c =7a, r g =10 w ,v ge =15v 190 ns t r (v off ) off voltage rise time 45 ns t d ( off ) delay time 110 ns t f fall time 140 ns e off (**) turn-off switching loss 240 m j e ts total switching loss 290 m j t c cross-over time v cc = 480 v, i c =7a, r g =10 w ,v ge =15v tj = 125 c 410 ns t r (v off ) off voltage rise time 135 ns t d ( off ) delay time 205 ns t f fall time 300 ns e off (**) turn-off switching loss 650 m j e ts total switching loss 625 m j
stGP7NB60F - stgd7nb60f 4/8 fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit
5/8 stGP7NB60F - stgd7nb60f dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stGP7NB60F - stgd7nb60f 6/8 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
7/8 stGP7NB60F - stgd7nb60f tape and reel shipment (suffix t4)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
stGP7NB60F - stgd7nb60f 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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